Manufacturer Part Number
SI7923DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Vishay's SI7923DN-T1-GE3 is a dual P-channel TrenchFET MOSFET designed for high-performance switching applications.
Product Features and Performance
Dual P-channel MOSFET configuration
Low on-resistance of 47 mOhm at 6.4A, 10V
High continuous drain current of 4.3A at 25°C
Logic-level gate with threshold voltage of 3V at 250 μA
Low gate charge of 21 nC at 10V
Product Advantages
Excellent efficiency and low power consumption
Compact PowerPAK 1212-8 Dual package
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Continuous Drain Current (ID) @ 25°C: 4.3A
On-Resistance (RDS(on)) @ 6.4A, 10V: 47 mOhm
Gate Charge (Qg) @ 10V: 21 nC
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Manufactured using advanced MOSFET technology
Compatibility
The SI7923DN-T1-GE3 is compatible with a wide range of electronic devices and systems that require high-performance, low-power switching.
Application Areas
Power management circuits
Motor control applications
Switching power supplies
Telecommunications equipment
Product Lifecycle
The SI7923DN-T1-GE3 is an active product, and Vishay continues to support it. Replacements or upgrades may become available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent efficiency and low power consumption
Compact and robust PowerPAK 1212-8 Dual package
Wide operating temperature range suitable for demanding applications
Proven Vishay MOSFET technology for reliable performance
Compatibility with a wide range of electronic devices and systems
SI7922DN-T1-E3 MOSElectro-Films (EFI) / Vishay