SI7922DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7922DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel MOSFET in PowerPAK 1212-8 package

Product Features and Performance

100V Drain-to-Source Voltage (Vdss)

195mΩ Maximum On-Resistance (RDS(on)) at 2.5A, 10V

8A Continuous Drain Current (ID) at 25°C

Logic Level Gate

8nC Maximum Gate Charge (Qg) at 10V

Wide Operating Temperature Range: -55°C to 150°C

Product Advantages

Compact and efficient dual MOSFET design

Low on-resistance for low power loss

Logic level gate for easy drive

Suitable for a wide range of applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

On-Resistance (RDS(on)): 195mΩ @ 2.5A, 10V

Drain Current (ID): 1.8A @ 25°C

Gate Threshold Voltage (Vgs(th)): 3.5V @ 250μA

Gate Charge (Qg): 8nC @ 10V

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Suitable for a wide range of applications requiring high-performance, low on-resistance dual N-Channel MOSFETs.

Application Areas

Power management circuits

Motor control

Switch-mode power supplies

Automotive electronics

Industrial automation

Product Lifecycle

This product is an active and readily available part from Vishay. There are no indications of it being discontinued or nearing the end of its lifecycle.

Key Reasons to Choose This Product

Excellent performance with low on-resistance

Compact and efficient dual MOSFET design

Wide operating temperature range

Logic level gate for easy drive

RoHS3 compliance for environmental safety

Proven reliability and quality from Vishay