SI7913DN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7913DN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance dual P-channel power MOSFET in a space-saving PowerPAK 1212-8 Dual package.

Product Features and Performance

Dual P-channel power MOSFET in a single package

Low on-resistance for improved energy efficiency

High-speed switching

Suitable for high-frequency, high-power applications

Product Advantages

Compact and space-saving package

Excellent thermal performance

Low on-resistance for high efficiency

Suitable for high-frequency, high-power applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

On-Resistance (Rds(on)): 37mΩ @ 7.4A, 4.5V

Continuous Drain Current (Id): 5A @ 25°C

Gate Threshold Voltage (Vgs(th)): 1V @ 250A

Gate Charge (Qg): 24nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature operation (-55°C to 150°C)

Compatibility

Compatible with various high-frequency, high-power applications

Application Areas

Switching power supplies

Motor drives

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from Vishay/Siliconix.

Key Reasons to Choose This Product

Compact and space-saving package

Excellent thermal performance and efficiency

Suitable for high-frequency, high-power applications

Reliable and RoHS3 compliant

Wide operating temperature range (-55°C to 150°C)