SI7911DN-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7911DN-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel power MOSFET in a dual-die PowerPAK 1212-8 Dual package, designed for power management and switching applications.

Product Features and Performance

Dual P-channel MOSFET in a single package

Low on-resistance (Rds(on)) for high efficiency

Logic-level gate drive for easy microcontroller interfacing

Compact and thermally efficient PowerPAK 1212-8 Dual package

Capable of handling up to 4.2A continuous drain current at 25°C

Drain-to-source voltage rating of 20V

Product Advantages

Excellent thermal performance and power dissipation

Reduced board space and simplified circuit design

Ease of use with logic-level gate drive

Reliable and robust design for power management applications

Key Technical Parameters

Rds(on) of 51mΩ @ 5.7A, 4.5V

Vgs(th) of 1V @ 250μA

Gate charge (Qg) of 15nC @ 4.5V

Maximum power dissipation of 1.3W

Quality and Safety Features

RoHS3 compliant

Reliable and robust design for long-term performance

Meets relevant safety and regulatory requirements

Compatibility

Suitable for various power management and switching applications

Can be used in place of similar MOSFET devices in the market

Application Areas

Power supplies

Motor control

Battery chargers

Automotive electronics

General-purpose switching and control

Product Lifecycle

Currently in production

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Compact and space-saving dual-die package

Easy microcontroller interfacing with logic-level gate drive

Reliable and robust design for demanding applications

Proven track record and support from the manufacturer