Manufacturer Part Number
SI7636DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET
Suitable for power supply, motor drive, and other power management applications
Product Features and Performance
30V drain-to-source voltage
4mΩ maximum on-resistance at 25A, 10V
17A continuous drain current at 25°C
Ultra-low gate charge of 50nC at 4.5V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Compact and thermally efficient PowerPAK SO-8 package
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 4mΩ @ 25A, 10V
Continuous drain current (Id): 17A @ 25°C
Input capacitance (Ciss): 5600pF @ 15V
Power dissipation (Ptot): 1.9W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power management and motor drive applications
Application Areas
Power supplies
Motor drives
Power management circuits
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options are available from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent power efficiency and high current handling capability
Compact and thermally efficient package
Wide operating temperature range
Suitable for high-reliability applications
Availability of replacement and upgrade options
SI7652DP-T1-E3Electro-Films (EFI) / Vishay