Manufacturer Part Number
SI7658ADP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel TrenchFET Power MOSFET
Product Features and Performance
High current capability up to 60A at 25°C
Low on-resistance of 2.2mΩ @ 20A, 10V
Fast switching with low gate charge of 110nC @ 10V
Wide operating temperature range from -55°C to 150°C
High voltage capability up to 30V drain-to-source
Product Advantages
Excellent power efficiency due to low on-resistance
Robust design for high current and temperature applications
Fast switching for improved system performance
Compact PowerPAK SO-8 package for space-saving designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 60A at 25°C
On-Resistance (Rds(on)): 2.2mΩ @ 20A, 10V
Input Capacitance (Ciss): 4590pF @ 15V
Power Dissipation: 5.4W at 25°C, 83W at 100°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Widely used in power management, motor control, and automotive applications
Application Areas
Power supplies
Motor drives
Automotive electronics
Industrial automation
Product Lifecycle
Current product, no plans for discontinuation
Replacement and upgrade options available from Vishay/Siliconix
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power conversion
Wide operating temperature range for robust performance in harsh environments
Fast switching and low gate charge for improved system efficiency
Compact PowerPAK SO-8 package for space-saving designs
Backed by Vishay/Siliconix's reputation for quality and reliability