Manufacturer Part Number
SI7634BDP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Trench MOSFET technology
Low on-resistance
High current capability
Wide temperature range operation
Product Advantages
Efficient power conversion
Reduced power dissipation
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 15A, 10V
Current Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Currently available
No known discontinuation plans
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent power efficiency and low power dissipation
High current handling capability
Wide temperature range operation
Reliable performance and long lifespan
Suitable for various power electronics applications