SI7633DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7633DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel TrenchFET power MOSFET

Product Features and Performance

Low on-resistance of 3.3 mOhm at 20 A, 10 V

High current capability of 60 A at 25°C

Low gate charge of 260 nC at 10 V

Wide operating temperature range of -55°C to 150°C

High power dissipation of 6.25 W at Ta and 104 W at Tc

Product Advantages

Excellent performance for power management applications

Efficient power conversion with low conduction losses

Reliable operation in harsh environments

Compact surface-mount package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20 V

Gate-to-Source Voltage (Vgs): ±20 V

Continuous Drain Current (Id): 60 A at 25°C

On-Resistance (Rds(on)): 3.3 mOhm at 20 A, 10 V

Input Capacitance (Ciss): 9500 pF at 10 V

Gate Charge (Qg): 260 nC at 10 V

Quality and Safety Features

RoHS3 compliant

Reliable and robust design for industrial and automotive applications

Compatibility

Compatible with standard surface-mount manufacturing processes

Suitable for a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Lighting control

Battery management systems

Industrial automation

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options may be available in the future

Several Key Reasons to Choose This Product

Excellent performance and efficiency for power management applications

Reliable and robust design for industrial and automotive use

Wide operating temperature range and high power dissipation

Compact surface-mount package for space-constrained designs

RoHS3 compliance for environmental sustainability