Manufacturer Part Number
SI7635DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Single Transistor (MOSFET)
Product Features and Performance
P-Channel MOSFET with TrenchFET technology
Low on-resistance (RDS(on) of 4.9 mΩ @ 26A, 10V)
High current capability (40A continuous drain current at 25°C)
Low input capacitance (4595 pF @ 10V)
Wide operating temperature range (-55°C to 150°C)
High power dissipation (5W at Ta, 54W at Tc)
Product Advantages
Excellent efficiency and thermal performance
Reduced power loss and improved system reliability
Suitable for high current, high frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 20V
Gate-to-Source Voltage (VGS): ±16V
Threshold Voltage (VGS(th)): 2.2V @ 250A
Drive Voltage (Max RDS(on), Min RDS(on)): 4.5V, 10V
Gate Charge (Qg): 143 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
PowerPAK SO-8 package
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance
High current capability and low on-resistance
Wide operating temperature range
Suitable for high frequency, high power switching applications
Compact surface mount package