Manufacturer Part Number
SI7431DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor - FET, MOSFET
Product Features and Performance
RoHS3 Compliant
PowerPAK SO-8 Package
TrenchFET Series
Operating Temperature Range: -55°C to 150°C (TJ)
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds On) Max: 174mOhm @ 3.8A, 10V
MOSFET Technology
Continuous Drain Current (Id) @ 25°C: 2.2A (Ta)
Power Dissipation (Max): 1.9W (Ta)
P-Channel FET Type
Threshold Voltage (Vgs(th)) Max: 4V @ 250μA
Drive Voltage: 6V (Max Rds On), 10V (Min Rds On)
Gate Charge (Qg) Max: 135nC @ 10V
Product Advantages
High voltage rating
Low on-resistance
Efficient thermal performance
Compact PowerPAK SO-8 package
Key Technical Parameters
Voltage, Current, and Power Ratings
On-Resistance
Gate Charge
Threshold Voltage
Quality and Safety Features
RoHS3 Compliant
Suitable for high-temperature applications
Compatibility
Compatible with various electronic circuits and systems that require high-voltage, low on-resistance P-channel MOSFET devices.
Application Areas
Power supplies
Motor drives
Lighting systems
Industrial controls
Automotive electronics
Product Lifecycle
Active product
Replacement and upgrade options may be available
Key Reasons to Choose This Product
High voltage rating up to 200V
Extremely low on-resistance for efficient power transfer
Compact and thermally efficient PowerPAK SO-8 package
Suitable for a wide range of high-power, high-temperature applications
RoHS3 compliance for environmental responsibility