SI7430DP-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7430DP-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-Channel MOSFET with low on-resistance and high speed switching capabilities

Product Features and Performance

Drain to Source Voltage (Vdss) of 150V

Rds On (Max) of 45mOhm at 5A, 10V

Continuous Drain Current (Id) of 26A at 25°C

Input Capacitance (Ciss) of 1735pF at 50V

Power Dissipation (Max) of 5.2W at Ta, 64W at Tc

Gate Charge (Qg) of 43nC at 10V

Product Advantages

Excellent power efficiency and thermal management

High speed and low switching losses

Robust and reliable performance

Key Technical Parameters

N-Channel MOSFET technology

Vgs (Max) of ±20V

Vgs(th) (Max) of 4.5V at 250A

Drive Voltage (Max Rds On, Min Rds On) of 8V, 10V

Operating Temperature range of -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Rigorous quality control and testing

Compatibility

Suitable for a wide range of power electronics applications

Can be used as a drop-in replacement for similar MOSFET devices

Application Areas

Power supplies

Motor drives

Inverters

Switch-mode power supplies

Industrial and consumer electronics

Product Lifecycle

This product is currently in production

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

High speed and low switching losses for improved system efficiency

Robust and reliable design for long-term usage

Wide operating temperature range for diverse applications

RoHS compliance and quality certifications for environmental and safety assurance