Manufacturer Part Number
SI7421DN-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
PowerPAK 1212-8 Package
TrenchFET Series
Tape & Reel (TR) Packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.8A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Power Dissipation (Max): 1.5W (Ta)
P-Channel FET Type
Vgs(th) (Max) @ Id: 3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Surface Mount Mounting Type
Product Advantages
High power handling capability
Low on-resistance
Fast switching performance
Compact and space-saving package
Key Technical Parameters
Voltage and current ratings
On-resistance and gate charge specifications
Operating temperature range
Quality and Safety Features
RoHS3 compliance for environmental safety
Reliable and durable construction
Compatibility
Suitable for a wide range of electronic applications that require high-performance P-channel MOSFETs
Application Areas
Power management circuits
Motor control systems
Switching power supplies
Portable electronics
Industrial automation
Product Lifecycle
This product is an active and widely used MOSFET solution.
Replacement or upgrade options are available from Vishay and other manufacturers.
Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Fast switching capabilities for high-speed applications
Compact and space-saving package design
Robust and reliable performance across a wide temperature range
RoHS3 compliance for environmentally-friendly applications
Si7415DN-T1Electro-Films (EFI) / Vishay