Manufacturer Part Number
SI7431DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Transistor - FET, MOSFET - Single
Product Features and Performance
P-Channel MOSFET
200V Drain-Source Voltage
±20V Gate-Source Voltage
174mΩ On-Resistance @ 3.8A, 10V
2A Continuous Drain Current @ 25°C
9W Power Dissipation
-55°C to 150°C Operating Temperature
135nC Gate Charge @ 10V
Product Advantages
Efficient power switching
High voltage capability
Low on-resistance
Wide temperature range
Compact PowerPAK SO-8 package
Key Technical Parameters
Drain-Source Voltage: 200V
Gate-Source Voltage: ±20V
On-Resistance: 174mΩ
Continuous Drain Current: 2.2A
Power Dissipation: 1.9W
Operating Temperature: -55°C to 150°C
Gate Charge: 135nC
Quality and Safety Features
RoHS3 compliant
Reliable Trench MOSFET technology
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
Power switching
Motor control
Inverters
DC-DC converters
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose
High voltage and current capability
Low on-resistance for efficient power switching
Wide temperature range for versatile applications
Compact and reliable PowerPAK SO-8 package
RoHS3 compliance for environmental responsibility