SI7439DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7439DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel TrenchFET MOSFET with low on-resistance, high speed, and high power density.

Product Features and Performance

Low on-resistance down to 90 mΩ

High drain current up to 3A

Wide operating temperature range of -55°C to 150°C

Fast switching speed

High power density with 1.9W max power dissipation

Product Advantages

Excellent performance in power management and control applications

Suitable for high-frequency switching applications

Optimized for space-constrained designs

Key Technical Parameters

Drain-Source Voltage (Vdss): 150V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 90 mΩ @ 5.2A, 10V

Continuous Drain Current (Id): 3A @ 25°C

Gate Charge (Qg): 135 nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Surface mount packaging (PowerPAK SO-8)

Application Areas

Power management circuits

Motor control

Switching power supplies

Battery chargers

White goods

Industrial electronics

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent performance-to-size ratio

Reliable and robust design

Suitable for a wide range of power management and control applications

Cost-effective solution for high-frequency, high-power density designs