Manufacturer Part Number
SI7137DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel MOSFET transistor designed for power applications
Product Features and Performance
Low on-resistance (RdsOn) of 1.95 mOhm @ 25A, 10V
High continuous drain current (Id) of 60A at 25°C case temperature
High power dissipation of 6.25W at 25°C ambient temperature, 104W at 25°C case temperature
Fast switching with low gate charge (Qg) of 585 nC @ 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency and thermal performance
Suitable for high-current, high-power applications
Fast switching for improved system performance
Reliable operation across wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs) max: ±12V
Input Capacitance (Ciss) max: 20000 pF @ 10V
Threshold Voltage (Vgs(th)) max: 1.4V @ 250A
Quality and Safety Features
RoHS3 compliant
Suitable for Tape & Reel (TR) packaging
Compatibility
PowerPAK SO-8 package
Compatible with standard MOSFET footprints and drivers
Application Areas
Power supplies
Motor drives
Automotive electronics
Industrial equipment
Product Lifecycle
Current production product
Replacements and upgrades available if needed
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling and power dissipation capabilities
Fast switching for improved system performance
Reliable operation across wide temperature range
RoHS3 compliance for environmental safety