Manufacturer Part Number
SI7135DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel Trench MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Very low on-resistance (RDS(on)) of 3.9mOhm @ 20A, 10V
Continuous Drain Current (ID) of 60A at 25°C
Wide operating temperature range of -55°C to +150°C
High input capacitance (Ciss) of 8650pF @ 15V
Low gate charge (Qg) of 250nC @ 10V
Product Advantages
Excellent power handling capability
Efficient power conversion
Compact PowerPAK SO-8 package
Key Technical Parameters
Vgs (Max): ±20V
RDS(on) (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Vgs(th) (Max) @ Id: 3V @ 250A
Drive Voltage (Max RDS(on), Min RDS(on)): 4.5V, 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Mounting Type: Surface Mount
Application Areas
Power management
Motor control
DC-DC conversion
Industrial and consumer electronics
Product Lifecycle
Currently available
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact packaging
Wide operating temperature range
Suitable for high-reliability applications
Cost-effective solution for power management and control