Manufacturer Part Number
SI7129DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
ROHS3 Compliant
PowerPAK 1212-8 package
TrenchFET series
Tape & Reel (TR) packaging
Operating temperature range: -50°C to 150°C
Drain to Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs): ±20V
Maximum On-Resistance (Rds(on)): 11.4mOhm @ 14.4A, 10V
MOSFET (Metal Oxide) technology
Continuous Drain Current (Id): 35A @ 25°C (Tc)
Maximum Input Capacitance (Ciss): 3345pF @ 15V
Maximum Power Dissipation: 3.8W (Ta), 52.1W (Tc)
P-Channel FET type
Maximum Gate Threshold Voltage (Vgs(th)): 2.8V @ 250A
Drive Voltage Range: 4.5V (Max Rds(on)), 10V (Min Rds(on))
Maximum Gate Charge (Qg): 71nC @ 10V
Surface Mount Mounting Type
Product Advantages
High current and power handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Compact PowerPAK 1212-8 package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 11.4mOhm
Continuous Drain Current (Id): 35A
Input Capacitance (Ciss): 3345pF
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with various electronic circuits and power conversion applications
Application Areas
Suitable for a wide range of power management and conversion applications, such as DC-DC converters, motor drives, and other power electronics circuits.
Product Lifecycle
This product is an active and currently available device from Vishay/Siliconix.
Key Reasons to Choose This Product
High current and power handling capabilities for efficient power conversion
Low on-resistance for minimizing power losses
Wide operating temperature range for diverse applications
Compact PowerPAK 1212-8 package for space-constrained designs
ROHS3 compliance for environmental responsibility