Manufacturer Part Number
SI7143DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET MOSFET
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 30V
On-State Resistance (Rds(on)) as low as 10mΩ
Continuous Drain Current (Id) of 35A at 25°C case temperature
Wide Operating Temperature Range of -50°C to 150°C
Low Input Capacitance (Ciss) of 2230pF
High Power Dissipation of 4.2W at 25°C ambient and 35.7W at 25°C case temperature
Product Advantages
Excellent on-state resistance for low conduction losses
High current handling capability
Wide temperature range for diverse applications
Compact PowerPAK SO-8 surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 10mΩ @ 16.1A, 10V
Continuous Drain Current (Id): 35A at 25°C case temperature
Input Capacitance (Ciss): 2230pF @ 15V
Power Dissipation: 4.2W at 25°C ambient, 35.7W at 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Packaged in Tape & Reel (TR) for surface mount assembly
Compatibility
Compatible with various electronic circuits and systems requiring a high-performance P-channel MOSFET
Application Areas
Switching power supplies
Motor drives
Automotive electronics
Industrial automation and control
General purpose power switching applications
Product Lifecycle
Currently in production
Replacements and upgrades may be available from Vishay/Siliconix as technology evolves
Key Reasons to Choose This Product
Excellent on-state resistance for high efficiency
High current handling capability for demanding applications
Wide operating temperature range for diverse environments
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmental responsibility
Proven reliability and performance from a leading semiconductor manufacturer
SI7139DP-T1-GE3 MOSElectro-Films (EFI) / Vishay