Manufacturer Part Number
SI7145DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Single P-channel power MOSFET
Product Features and Performance
30V Drain-Source Voltage
60A Continuous Drain Current
6mOhm On-Resistance
15,660pF Input Capacitance
413nC Gate Charge
-55°C to 150°C Operating Temperature Range
Product Advantages
High Current Handling Capability
Low On-Resistance
High Power Dissipation
Wide Operating Temperature Range
Surface Mount Packaging
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 60A
On-Resistance (Rds(on)): 2.6mOhm
Input Capacitance (Ciss): 15,660pF
Gate Charge (Qg): 413nC
Power Dissipation (Pd): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
PowerPAK SO-8 Packaging
Compatibility
Applicable for a wide range of power electronic circuits and systems
Application Areas
Power Supplies
DC/DC Converters
Motor Drives
Power Amplifiers
Switching Regulators
Product Lifecycle
Currently in production. No plans for discontinuation announced. Replacements and upgrades may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
High current and power handling capability
Excellent low on-resistance performance
Wide operating temperature range
Compact and efficient surface mount packaging
RoHS compliance for eco-friendly applications
Proven reliability and performance from a leading semiconductor manufacturer