SI7119DN-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI7119DN-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Transistor, FET, MOSFET (Single)

Product Features and Performance

P-Channel MOSFET

High voltage, high current capability

Low on-resistance

Fast switching speed

Suitable for a wide range of applications

Product Advantages

Efficient power conversion

Compact design

Reliable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 200 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 1 A, 10 V

Continuous Drain Current (Id) @ 25°C: 3.8 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 50 V

Power Dissipation (Max): 3.7 W (Ta), 52 W (Tc)

Vgs(th) (Max) @ Id: 4 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 6 V, 10 V

Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V

Quality and Safety Features

RoHS3 Compliant

Meets high reliability and safety standards

Compatibility

Surface Mount Packaging: PowerPAK 1212-8

Suitable for a wide range of electronic applications

Application Areas

Power supplies

Motor drives

Automotive electronics

Industrial automation

Consumer electronics

Product Lifecycle

Current product

Replacements and upgrades may be available

Key Reasons to Choose This Product

High voltage and current capability

Low on-resistance for efficient power conversion

Fast switching speed for improved system performance

Compact and reliable design

Broad compatibility and versatile applications