Manufacturer Part Number
SI7116DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
PowerPAK 1212-8 Package
Surface Mount Mounting
TrenchFET Series
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Power Dissipation (Max): 1.5W (Ta)
N-Channel FET Type
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Product Advantages
RoHS3 Compliant
High performance TrenchFET technology
Wide operating temperature range
Low on-resistance
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Current Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Package
Application Areas
Suitable for a wide range of power management and control applications
Product Lifecycle
Current product, no information on discontinuation or replacements
Key Reasons to Choose This Product
High performance TrenchFET technology
Wide operating temperature range
Low on-resistance
RoHS3 compliant
Surface mount package