SI7116BDN-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI7116BDN-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Single Transistor MOSFET

Product Features and Performance

PowerPAK 1212-8 package

Operating Temperature Range: -55°C to 150°C

Drain-Source Voltage (Vdss): 40V

Maximum Gate-Source Voltage (Vgs): ±20V

On-State Resistance (Rds(on)): 7.4mΩ @ 16A, 10V

Continuous Drain Current (Id): 18.4A (Ta), 65A (Tc)

Input Capacitance (Ciss): 1915pF @ 20V

Power Dissipation: 5W (Ta), 62.5W (Tc)

N-Channel MOSFET

Threshold Voltage (Vgs(th)): 2.5V @ 250A

Gate Charge (Qg): 48nC @ 10V

Product Advantages

High current handling capability

Low on-state resistance

Compact PowerPAK 1212-8 package

Wide operating temperature range

Key Technical Parameters

Drain-Source Voltage (Vdss): 40V

Maximum Gate-Source Voltage (Vgs): ±20V

On-State Resistance (Rds(on)): 7.4mΩ @ 16A, 10V

Continuous Drain Current (Id): 18.4A (Ta), 65A (Tc)

Quality and Safety Features

Vishay Siliconix manufacturing quality

Compatibility

Surface mount package

Suitable for a variety of electronic circuit applications

Application Areas

Power management

Motor control

Switching circuits

Industrial and consumer electronics

Product Lifecycle

Current production model

Replacement and upgrade options available

Key Reasons to Choose This Product

High current handling and low on-state resistance for efficient power management

Compact PowerPAK 1212-8 package for space-constrained designs

Wide operating temperature range for versatile applications

Vishay Siliconix quality and reliability