Manufacturer Part Number
SI7117DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel MOSFET Transistor
Product Features and Performance
Operates in the -55°C to 150°C temperature range
Supports up to 150V drain-to-source voltage
Offers a maximum gate-to-source voltage of ±20V
Provides a maximum on-resistance of 1.2Ω at 500mA, 10V
Delivers a maximum continuous drain current of 2.17A at 25°C
Exhibits a maximum input capacitance of 510pF at 25V
Handles a maximum power dissipation of 3.2W at Ta, 12.5W at Tc
Requires a drive voltage between 6V (max Rds on) and 10V (min Rds on)
Features a maximum gate charge of 12nC at 10V
Product Advantages
Efficient power management
Reliable high-temperature operation
Suitable for various power switching applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Vgs(th) (Max) @ Id: 4.5V @ 250A
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
PowerPAK 1212-8 package
Application Areas
Power supplies
Motor drives
Household appliances
Industrial electronics
Product Lifecycle
Currently available
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Optimized for efficient power switching
Reliable high-temperature operation
Suitable for a wide range of power management applications
Compact surface-mount package
RoHS3 compliance for environmental safety
Si7117DN-T1-E3 MOSElectro-Films (EFI) / Vishay