SI4435DDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4435DDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single

Product Features and Performance

P-Channel MOSFET

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 24mOhm @ 9.1A, 10V

Current Continuous Drain (Id) @ 25°C: 11.4A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V

Power Dissipation (Max): 2.5W (Ta), 5W (Tc)

Vgs(th) (Max) @ Id: 3V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V

Product Advantages

High current capability

Low on-resistance

Wide operating temperature range

Key Technical Parameters

RoHS: ROHS3 Compliant

Manufacturer's packaging: 8-SOIC

Mounting Type: Surface Mount

Package / Case: 8-SOIC (0.154", 3.90mm Width)

Supplier Device Package: 8-SOIC

Series: TrenchFET

Package: Tape & Reel (TR)

Operating Temperature: -55°C ~ 150°C (TJ)

Technology: MOSFET (Metal Oxide)

FET Type: P-Channel

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface mount applications

Application Areas

Power management

Motor control

Switch mode power supplies

Product Lifecycle

Currently available, no discontinuation known

Several Key Reasons to Choose This Product

High current capability up to 11.4A

Low on-resistance of 24mOhm

Wide operating temperature range of -55°C to 150°C

RoHS3 compliant for environmental safety

Suitable for surface mount applications