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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleSI4435DY
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SI4435DY - Infineon Technologies

Manufacturer Part Number
SI4435DY
Manufacturer
Infineon Technologies
Allelco Part Number
32D-SI4435DY
ECAD Model
Parts Description
MOSFET P-CH 30V 8A 8SO
Package
8-SOIC (0.154", 3.90mm Width)
Data sheet
SI4435DY.pdf
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Specifications

SI4435DY Tech Specifications
Infineon Technologies - SI4435DY technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - SI4435DY

Product Attribute Attribute Value  
Manufacturer Infineon Technologies  
Vgs(th) (Max) @ Id 1V @ 250µA  
Vgs (Max) ±20V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package 8-SO  
Series HEXFET®  
Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V  
Power Dissipation (Max) 2.5W (Ta)  
Package / Case 8-SOIC (0.154", 3.90mm Width)  
Package Tube  
Product Attribute Attribute Value  
Operating Temperature -55°C ~ 150°C (TJ)  
Mounting Type Surface Mount  
Input Capacitance (Ciss) (Max) @ Vds 2320 pF @ 15 V  
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V  
FET Type P-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V  
Drain to Source Voltage (Vdss) 30 V  
Current - Continuous Drain (Id) @ 25°C 8A (Tc)  

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS

Parts Introduction

Manufacturer Part Number

SI4435DY

Manufacturer

Infineon Technologies

Introduction

The SI4435DY is a discrete P-channel MOSFET transistor from Infineon Technologies.

Product Features and Performance

P-channel MOSFET design

30V drain-source voltage

20mΩ maximum on-resistance at 8A, 10V

8A continuous drain current at 25°C

32nF maximum input capacitance at 15V

5W maximum power dissipation

-55°C to 150°C operating temperature range

Product Advantages

Low on-resistance for efficient power switching

High current handling capability

Wide temperature operating range

Key Technical Parameters

Drain-Source Voltage (Vdss): 30V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 20mΩ @ 8A, 10V

Continuous Drain Current (Id): 8A @ 25°C

Input Capacitance (Ciss): 2.32nF @ 15V

Power Dissipation (Ptot): 2.5W

Quality and Safety Features

RoHS non-compliant

Compatibility

Surface mount 8-SOIC package

Application Areas

Power switching circuits

Motor control

Inverters

Product Lifecycle

Current production, no discontinuation expected

Key Reasons to Choose

Efficient power switching performance

High current capability

Wide temperature operating range

Surface mount package for easy assembly

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies SI4435DY

Product Attribute SI4435DY SI4435DY SI4435DDY-T1-GE3 SI4435DDY-T1-E3
Part Number SI4435DY SI4435DY SI4435DDY-T1-GE3 SI4435DDY-T1-E3
Manufacturer Infineon Technologies Fairchild Semiconductor Vishay Siliconix Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 8A (Tc) 11.4A (Tc) 11.4A (Tc)
Package Tube Bulk Tape & Reel (TR) Tape & Reel (TR)
Vgs (Max) ±20V ±20V ±20V ±20V
FET Type P-Channel P-Channel P-Channel P-Channel
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V 20mOhm @ 8A, 10V 24mOhm @ 9.1A, 10V 24mOhm @ 9.1A, 10V
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta), 5W (Tc) 2.5W (Ta), 5W (Tc)
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V 50 nC @ 10 V 50 nC @ 10 V
Series HEXFET® HEXFET® TrenchFET® TrenchFET®
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 3V @ 250µA 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds 2320 pF @ 15 V 2320 pF @ 15 V 1350 pF @ 15 V 1350 pF @ 15 V
FET Feature - - - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)

SI4435DY Datasheet PDF

Download SI4435DY pdf datasheets and Infineon Technologies documentation for SI4435DY - Infineon Technologies.

Other Related Documents
Part Number Guide.pdf
PCN Obsolescence/ EOL
EOL122B 02/Oct/2007.pdf

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Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

  1. Use your express account for shipment if you have one.
  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

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  1. Phone
    +00852 9146 4856

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SI4435DY Image

SI4435DY

Infineon Technologies
32D-SI4435DY

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