SI4435DY - onsemi

Manufacturer Part Number

SI4435DY

Manufacturer

onsemi

Introduction

The SI4435DY is a P-channel MOSFET transistor designed for power management applications.

Product Features and Performance

Operating temperature range of -55°C to 175°C

Drain-to-source voltage (Vdss) of 30V

Maximum gate-to-source voltage (Vgs) of ±20V

Low on-resistance (Rds(on)) of 20mΩ at 8.8A and 10V

High continuous drain current (Id) of 8.8A at 25°C

Low input capacitance (Ciss) of 1604pF at 15V

Maximum power dissipation of 2.5W at 25°C

Product Advantages

Excellent power handling capability

Low on-resistance for efficient power conversion

Wide temperature range for use in demanding applications

Compact surface mount package

Key Technical Parameters

Drain-to-source voltage (Vdss): 30V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 20mΩ @ 8.8A, 10V

Continuous drain current (Id): 8.8A @ 25°C

Input capacitance (Ciss): 1604pF @ 15V

Power dissipation (Max): 2.5W @ 25°C

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Compatible with a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Switching regulators

Battery management systems

Product Lifecycle

The SI4435DY is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available from onsemi.

Several Key Reasons to Choose This Product

Excellent power handling capabilities with low on-resistance

Wide temperature range for use in demanding applications

Compact surface mount package for space-constrained designs

High reliability and quality due to RoHS compliance and ISO-certified manufacturing

Compatibility with a wide range of power management and control applications