SI4435BDY-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI4435BDY-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel power MOSFET in a space-saving 8-SOIC package.

Product Features and Performance

Optimized for low on-state resistance

High current capability up to 7A

Low gate charge for fast switching

Wide temperature range from -55°C to 150°C

Low power dissipation up to 1.5W

Product Advantages

Excellent power efficiency

Compact and space-saving design

Reliable performance across a wide temperature range

Fast and efficient switching

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Gate-Source Voltage (Vgs): ±20V

On-State Resistance (Rds(on)): 20mΩ @ 9.1A, 10V

Continuous Drain Current (Id): 7A @ 25°C

Gate Charge (Qg): 70nC @ 10V

Quality and Safety Features

RoHS3 compliant

Reliable and robust construction

Extensive testing and quality control

Compatibility

Suitable for a wide range of power management and control applications

Application Areas

Power supplies

Motor drives

Battery chargers

Industrial controls

Telecommunication equipment

Product Lifecycle

Current production part

Replacement and upgrade options available

Key Reasons to Choose This Product

Optimized for high efficiency and low power loss

Compact and space-saving design

Reliable performance across a wide temperature range

Fast and efficient switching for improved system performance

Extensive testing and quality control for reliable operation