Manufacturer Part Number
SI4434DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Device
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET Technology
250V Drain-Source Voltage
1A Continuous Drain Current
155mΩ Drain-Source On-Resistance
-55°C to 150°C Operating Temperature Range
50nC Gate Charge at 10V
Product Advantages
High voltage handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Suitable for high-power, high-frequency switch mode power supply applications
Key Technical Parameters
Drain-Source Voltage: 250V
Gate-Source Voltage: ±20V
Drain Current: 2.1A
On-Resistance: 155mΩ
Gate Charge: 50nC
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Surface Mount Package: 8-SOIC
Tape & Reel Packaging
Application Areas
Switch Mode Power Supplies
Motor Drives
Power Inverters
Industrial Control Systems
Product Lifecycle
Current production
Replacements and upgrades may be available
Key Reasons to Choose
High voltage and current handling
Low on-resistance for efficient power conversion
Wide operating temperature range
Proven reliability in high-power applications
SI4435MSV