Manufacturer Part Number
SI4408DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI4408DY-T1-E3 is a discrete semiconductor transistor product from Vishay/Siliconix.
Product Features and Performance
N-channel MOSFET
Trench technology
High current capability up to 14A continuous
Low on-resistance of 4.5mOhm
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Compact 8-SOIC surface mount package
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 14A
On-Resistance (Rds(on)): 4.5mOhm
Gate Charge (Qg): 32nC
Quality and Safety Features
RoHS3 compliant
Reliable and durable Trench MOSFET design
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Suitable for power management, motor control, and other high-current switching applications
Product Lifecycle
Current product offering, no indication of discontinuation
Replacements and upgrades may be available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance
Wide operating temperature range
Compact and space-saving 8-SOIC package
High current capability up to 14A
Reliable and durable Trench MOSFET technology