Manufacturer Part Number
SI4410BDY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
30V Drain-Source Voltage
5mOhm On-Resistance @ 10A, 10V
5A Continuous Drain Current @ 25°C
4W Power Dissipation
-55°C to 150°C Operating Temperature Range
20nC Gate Charge @ 5V
Product Advantages
High performance MOSFET in compact SOIC package
Optimized for efficient power switching applications
Wide temperature operating range
Key Technical Parameters
Vdss: 30V
Vgs (Max): ±20V
Rds(on) (Max): 13.5mOhm
Id (Max): 7.5A
Pd (Max): 1.4W
Quality and Safety Features
RoHS3 Compliant
Reliable Trench MOSFET technology
Compatibility
Surface Mount 8-SOIC package
Application Areas
Power Switching
Power Amplifiers
Motor Drivers
DC-DC Converters
Product Lifecycle
Active product
Replacement/upgrade options available
Key Reasons to Choose
High performance MOSFET in compact package
Optimized for efficient power switching
Wide temperature operating range
Reliable Trench MOSFET technology
RoHS3 compliant