Manufacturer Part Number
SI4410BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel TrenchFET Power MOSFET
Product Features and Performance
N-Channel MOSFET with TrenchFET technology
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Low gate charge for efficient, high-speed switching
Withstands high drain-source voltage up to 30V
Supports continuous drain current up to 7.5A at 25°C
Product Advantages
Exceptional performance and efficiency
Reliable and durable design
Suitable for high-frequency, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 13.5mΩ @ 10A, 10V
Drain Current (Id): 7.5A continuous at 25°C
Power Dissipation (Pd): 1.4W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Compatible with various electronic devices and circuits
Application Areas
Switching power supplies
Motor drives
DC-DC converters
Intelligent power modules
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Exceptional performance and efficiency
Reliable and durable design
Suitable for high-frequency, high-power applications
Wide operating temperature range
Compliance with RoHS3 standards