Manufacturer Part Number
SI4406DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI4406DY-T1-E3 is a high-performance N-channel MOSFET transistor suitable for a wide range of power switching and control applications.
Product Features and Performance
Trench MOSFET technology for low on-resistance
High current handling capability up to 13A continuous drain current
Low gate charge for efficient switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Fast and efficient switching performance
High reliability and robustness
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs): ±20V
Maximum On-Resistance (Rds(on)): 4.5mΩ @ 20A, 10V
Maximum Drain Current (Id): 13A @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
8-SOIC package compatible with standard surface mount assembly processes
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
General power switching and control applications
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power efficiency and low switching losses
High current handling and reliability
Wide operating temperature range
Compatibility with standard surface mount assembly
Proven Trench MOSFET technology from a reputable manufacturer