SI4190DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4190DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance n-channel MOSFET with low on-resistance and fast switching.

Product Features and Performance

Drain-to-source voltage up to 100V

Very low on-resistance of 8.8mΩ @ 15A, 10V

Continuous drain current of 20A at 25°C

Input capacitance of 2000pF @ 50V

Gate threshold voltage of 2.8V @ 250A

Gate charge of 58nC @ 10V

Fast switching for efficient power conversion

Product Advantages

Excellent power efficiency due to low on-resistance

High current handling capability

Fast switching for use in power conversion applications

Surface mount package for compact design

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

On-Resistance (Rds(on)): 8.8mΩ @ 15A, 10V

Continuous Drain Current (Id): 20A @ 25°C

Input Capacitance (Ciss): 2000pF @ 50V

Gate Threshold Voltage (Vgs(th)): 2.8V @ 250A

Gate Charge (Qg): 58nC @ 10V

Quality and Safety Features

RoHS3 compliant

Reliable MOSFET design and manufacturing

Compatibility

8-SOIC surface mount package

Compatible with common power conversion and control applications

Application Areas

Power supplies

Motor drives

Inverters

DC-DC converters

Switching regulators

Product Lifecycle

Current production part

No plans for discontinuation

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

High current handling capability for demanding applications

Fast switching performance for efficient power conversion

Compact surface mount package for space-constrained designs

Reliable MOSFET design and RoHS3 compliance