Manufacturer Part Number
SI4190DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance n-channel MOSFET with low on-resistance and fast switching.
Product Features and Performance
Drain-to-source voltage up to 100V
Very low on-resistance of 8.8mΩ @ 15A, 10V
Continuous drain current of 20A at 25°C
Input capacitance of 2000pF @ 50V
Gate threshold voltage of 2.8V @ 250A
Gate charge of 58nC @ 10V
Fast switching for efficient power conversion
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Fast switching for use in power conversion applications
Surface mount package for compact design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
On-Resistance (Rds(on)): 8.8mΩ @ 15A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 2000pF @ 50V
Gate Threshold Voltage (Vgs(th)): 2.8V @ 250A
Gate Charge (Qg): 58nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET design and manufacturing
Compatibility
8-SOIC surface mount package
Compatible with common power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
DC-DC converters
Switching regulators
Product Lifecycle
Current production part
No plans for discontinuation
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current handling capability for demanding applications
Fast switching performance for efficient power conversion
Compact surface mount package for space-constrained designs
Reliable MOSFET design and RoHS3 compliance