Manufacturer Part Number
SI4178DY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
30V Drain-Source Voltage
±25V Gate-Source Voltage
21mΩ Rds(on) at 8.4A, 10V
12A Continuous Drain Current at 25°C
405pF Input Capacitance at 15V
4W Power Dissipation at 25°C, 5W at 25°C case
8V Gate Threshold Voltage at 250μA
12nC Gate Charge at 10V
Product Advantages
Efficient power switching
Low on-resistance
High power handling capability
Key Technical Parameters
Voltage Rating: 30V Drain-Source, ±25V Gate-Source
Current Rating: 12A Continuous Drain at 25°C
On-Resistance: 21mΩ at 8.4A, 10V
Capacitance: 405pF Input at 15V
Power Dissipation: 2.4W at 25°C, 5W at 25°C case
Gate Threshold: 2.8V at 250μA
Gate Charge: 12nC at 10V
Quality and Safety Features
RoHS3 Compliant
-55°C to 150°C Operating Temperature Range
Compatibility
Surface Mount 8-SOIC Package
Application Areas
Power switching
Motor control
Inverters
DC-DC converters
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available
Key Reasons to Choose This Product
Efficient power switching performance
Low on-resistance for low power loss
High power handling capability
Wide operating temperature range
RoHS3 compliance for environmental friendliness
Surface mount package for ease of assembly