SI4178DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4178DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI4178DY-T1-GE3 is a Discrete Semiconductor Product, specifically a Transistor - FET, MOSFET - Single.

Product Features and Performance

N-Channel MOSFET

30V Drain-to-Source Voltage

±25V Gate-to-Source Voltage

21mΩ On-Resistance @ 8.4A, 10V

12A Continuous Drain Current @ 25°C

405pF Input Capacitance @ 15V

4W Power Dissipation @ 25°C, 5W @ Tc

8V Gate Threshold Voltage @ 250μA

12nC Gate Charge @ 10V

Product Advantages

Low On-Resistance

High Drain Current Capability

Wide Temperature Range (-55°C to 150°C)

Compact 8-SOIC Surface Mount Package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 21mΩ @ 8.4A, 10V

Continuous Drain Current (Id): 12A @ 25°C

Input Capacitance (Ciss): 405pF @ 15V

Power Dissipation (Pd): 2.4W @ 25°C, 5W @ Tc

Gate Threshold Voltage (Vgs(th)): 2.8V @ 250μA

Gate Charge (Qg): 12nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Suitable for Reflow Soldering

Compatibility

The SI4178DY-T1-GE3 is compatible with a wide range of electronic circuits and applications that require a high-performance N-Channel MOSFET.

Application Areas

Power Management Circuits

Switching Circuits

Motor Control

Inverters

Industrial Electronics

Product Lifecycle

The SI4178DY-T1-GE3 is an active product, and Vishay / Siliconix continues to provide support and availability for this part.

Key Reasons to Choose This Product

Excellent low on-resistance performance

High drain current capability

Wide operating temperature range

Compact and efficient 8-SOIC surface mount package

RoHS3 compliance for environmentally-friendly applications

Proven reliability and quality from a reputable manufacturer