SI4186DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4186DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel enhancement mode power MOSFET in a space-saving 8-SOIC package.

Product Features and Performance

Ultra-low on-resistance for low conduction losses

Very low gate charge for high-speed switching

Excellent RDS(on) x Qg figure of merit

High current handling capability up to 35.8A

Wide operating temperature range of -55°C to 150°C

Product Advantages

Efficient power conversion with low conduction losses

High-speed switching for improved system efficiency

Compact and space-saving 8-SOIC package

Suitable for a wide range of power applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (RDS(on)): 2.6mΩ @ 15A, 10V

Continuous Drain Current (ID): 35.8A (at Tc)

Input Capacitance (Ciss): 3630pF @ 10V

Power Dissipation (Pd): 3W (at Ta), 6W (at Tc)

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Switch-mode power supplies

Motor drives

Industrial and automotive electronics

Product Lifecycle

This product is currently in active production and not nearing discontinuation.

Replacement or upgrade options are available from Vishay / Siliconix.

Key Reasons to Choose This Product

Excellent power efficiency and switching performance

Compact and space-saving 8-SOIC package

Wide operating temperature range and high current handling capability

RoHS3 compliance for use in environmentally friendly applications

Availability of replacement and upgrade options from the manufacturer