Manufacturer Part Number
SI4164DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI4164DY-T1-GE3 is a discrete semiconductor product, specifically a N-Channel MOSFET transistor from the TrenchFET series.
Product Features and Performance
30V drain-to-source voltage
±20V gate-to-source voltage
2mOhm maximum on-resistance @ 15A, 10V
30A continuous drain current @ 25°C
3545pF maximum input capacitance @ 15V
3W maximum power dissipation @ Ta, 6W @ Tc
95nC maximum gate charge @ 10V
Product Advantages
High current-handling capability
Low on-resistance for efficient power conversion
Compact 8-SOIC surface-mount package
Key Technical Parameters
MOSFET technology
N-Channel FET type
5V maximum gate-to-source threshold voltage @ 250A
5V to 10V drive voltage range
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Surface mount 8-SOIC package
Application Areas
Suitable for various power conversion and control applications
Product Lifecycle
Currently in production, no indication of discontinuation
Several Key Reasons to Choose This Product
High current and power handling capabilities
Efficient performance with low on-resistance
Compact surface-mount package for space-constrained designs
Wide operating temperature range for versatile applications