SI4160DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4160DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel enhancement-mode power MOSFET in a surface-mount package.

Product Features and Performance

Low on-resistance (RDS(on)) for high efficiency

Fast switching speed

Low gate charge for high-frequency operation

Avalanche rated

Rugged and reliable

Product Advantages

Excellent thermal management

Optimized for high-efficiency power conversion

Suitable for high-frequency and high-power applications

Key Technical Parameters

Drain-to-Source Voltage (Vds): 30V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (RDS(on)): 4.9mΩ @ 15A, 10V

Continuous Drain Current (ID): 25.4A (at 25°C)

Input Capacitance (Ciss): 2071pF @ 15V

Power Dissipation: 2.5W (at 25°C), 5.7W (at case temperature)

Gate Charge (Qg): 54nC @ 10V

Quality and Safety Features

RoHS3 compliant

Operates in a wide temperature range (-55°C to 150°C)

Compatibility

Surface mount 8-SOIC package

Application Areas

Switching power supplies

Motor drives

Automotive electronics

Industrial controls

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent thermal management and efficiency

Suitable for high-frequency and high-power applications

Reliable and rugged performance

Wide operating temperature range

Compact surface-mount package