Manufacturer Part Number
SI4154DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI4154DY-T1-GE3 is a single N-Channel TrenchFET MOSFET transistor from Vishay/Siliconix. It is designed for a wide range of power management and switching applications.
Product Features and Performance
N-Channel MOSFET with TrenchFET technology
40V Drain-to-Source Voltage
36A Continuous Drain Current at 25°C
Low On-Resistance of 3.3mΩ at 15A, 10V
Fast Switching Speed
Low Gate Charge of 105nC at 10V
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent Power Density and Efficiency
High Reliability and Ruggedness
Compact Surface Mount Package
Easy to Drive and Control
Key Technical Parameters
Vdss: 40V
Vgs (Max): ±20V
Rds (On) (Max): 3.3mΩ @ 15A, 10V
Ciss (Max): 4230pF @ 20V
Qg (Max): 105nC @ 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Quality and Safety Features
RoHS3 Compliant
Qualified to AEC-Q101 Standard
Compatibility
This MOSFET is compatible with a wide range of power management, switching, and control applications.
Application Areas
Switch-Mode Power Supplies
DC-DC Converters
Motor Drives
Lighting Control
Industrial and Automotive Electronics
Product Lifecycle
The SI4154DY-T1-GE3 is an active and available product. Vishay/Siliconix continues to support this device, and there are no plans for discontinuation in the near future.
Key Reasons to Choose This Product
High Performance TrenchFET Technology
Excellent Power Density and Efficiency
Compact Surface Mount Package
Wide Operating Temperature Range
High Reliability and Ruggedness
Easy to Drive and Control