SI4136DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4136DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI4136DY-T1-GE3 is a high-performance N-channel MOSFET from Vishay Siliconix, part of the TrenchFET series.

Product Features and Performance

High drain current capacity of 46A at 25°C case temperature

Low on-resistance of 2mΩ at 15A, 10V

Wide operating temperature range of -55°C to 150°C

High input capacitance of 4560pF at 10V

High power dissipation of 3.5W at ambient temperature and 7.8W at case temperature

Product Advantages

Excellent thermal performance and power handling

Ideal for high-current, high-power applications

Robust design for reliable operation

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±20V

Threshold Voltage (Vgs(th)): 2.2V at 250A

Drive Voltage (Rds(on) max/min): 4.5V/10V

Gate Charge (Qg): 110nC at 10V

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Compatible with a wide range of electronic circuits and systems requiring high-performance N-channel MOSFETs

Application Areas

High-current, high-power applications

Automotive electronics

Industrial power supplies

Motor drives

Switching power supplies

Product Lifecycle

Current product, not nearing discontinuation

Replacement or upgraded models may become available in the future

Key Reasons to Choose This Product

Excellent thermal performance and power handling

Low on-resistance for high efficiency

Wide operating temperature range for diverse applications

Robust design for reliable operation

Compatibility with a wide range of electronic circuits and systems