Manufacturer Part Number
SI4166DY-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Trench technology for low on-resistance
High current handling capability of 30.5A at 25°C
Low gate charge for high-speed switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion
High reliability
Compact surface-mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 3.9mΩ @ 15A, 10V
Input Capacitance (Ciss): 2730pF @ 15V
Power Dissipation: 3W (Ta), 6.5W (Tc)
Quality and Safety Features
RoHS3 compliant
8-SOIC package for reliable surface-mount assembly
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Switching power supplies
Motor drives
Battery chargers
Industrial controls
Telecommunications equipment
Product Lifecycle
Current product offering
Replacement and upgrade options available
Key Reasons to Choose This Product
High-performance trench MOSFET technology
Excellent power handling and efficiency
Wide operating temperature range
Reliable surface-mount packaging
Compatibility with a variety of applications