SI4168DY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI4168DY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SI4168DY-T1-GE3 is a N-Channel MOSFET transistor with advanced TrenchFET technology, ideal for a variety of power management and switching applications.

Product Features and Performance

30V drain-to-source voltage rating

Low on-resistance of 5.7mΩ at 20A, 10V

Continuous drain current of 24A at 25°C case temperature

Wide operating temperature range of -55°C to 150°C

Fast switching speed and low gate charge of 44nC at 10V

Product Advantages

Excellent thermal efficiency and power dissipation

Reliable performance in high-current, high-temperature environments

Compact surface-mount 8-SOIC package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 5.7mΩ @ 20A, 10V

Continuous Drain Current (ID): 24A @ 25°C

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

This MOSFET is compatible with a wide range of power management and switching applications, including:

DC-DC converters

Motor drives

Power supplies

Lighting control

Industrial automation

Application Areas

Power management

Power conversion

Motor control

Industrial electronics

Product Lifecycle

The SI4168DY-T1-GE3 is an active and widely available product, with no indication of impending discontinuation. Replacement options and product upgrades are readily available from Vishay/Siliconix.

Key Reasons to Choose This Product

Excellent thermal performance and power handling

Reliable operation in high-current, high-temperature environments

Compact surface-mount package for space-constrained designs

Compatibility with a wide range of power management and switching applications

Availability and ongoing support from a leading semiconductor manufacturer, Vishay/Siliconix