Manufacturer Part Number
SI3440DV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance n-channel enhancement-mode power MOSFET in a small footprint SOT-23-6 package
Product Features and Performance
Trench technology for low on-resistance
Low gate charge for fast switching
High avalanche energy capability
Rugged and reliable design
Suitable for high-frequency, high-efficiency switching applications
Product Advantages
Excellent power efficiency
Compact size
High reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 375mΩ @ 1.5A, 10V
Continuous Drain Current (Id): 1.2A @ 25°C
Power Dissipation (Pd): 1.14W @ 25°C
Gate Charge (Qg): 8nC @ 10V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for surface mount assembly
Application Areas
Switch-mode power supplies
Motor drives
Battery chargers
Lighting ballasts
Telecommunications equipment
Product Lifecycle
Current product, no indication of discontinuation
Replacement and upgrade options available from Vishay
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact size and easy integration
High reliability and ruggedness
Suitable for a wide range of high-frequency, high-efficiency switching applications