SI3437DV-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI3437DV-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Vishay's SI3437DV-T1-E3 is a P-Channel MOSFET transistor designed for high-performance power applications.

Product Features and Performance

150V Drain-to-Source Voltage Capability

Low On-Resistance of 750mOhm @ 1.4A, 10V

High Continuous Drain Current of 1.4A @ 25°C

Wide Operating Temperature Range of -55°C to 150°C

Fast Switching Speed and Low Gate Charge of 19nC @ 10V

Optimized for Efficient Switching and Low Power Loss

Product Advantages

Excellent Power Handling Capability

Efficient Switching Performance

Wide Temperature Tolerance

Compact Surface Mount Package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 150V

Gate-to-Source Voltage (Vgs): ±20V

Drain Current (Id): 1.4A @ 25°C

On-Resistance (Rds(on)): 750mOhm @ 1.4A, 10V

Input Capacitance (Ciss): 510pF @ 50V

Power Dissipation: 2W @ Ta, 3.2W @ Tc

Quality and Safety Features

RoHS3 Compliant

Reliable Trench MOSFET Technology

Compatibility

Suitable for a wide range of power management and switching applications

Application Areas

Power Supplies

DC-DC Converters

Motor Drives

Battery Chargers

Lighting Controls

Product Lifecycle

Currently in active production

No immediate plans for discontinuation

Replacements or upgrades may become available in the future

Key Reasons to Choose This Product

Excellent power handling and efficiency

Wide temperature range for robust operation

Compact surface mount package for space-constrained designs

Reliable trench MOSFET technology for long-term performance

RoHS3 compliance for environmentally-friendly applications