SI3437DV-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI3437DV-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This is a P-channel power MOSFET from Vishay/Siliconix's TrenchFET series, suitable for a variety of power switching and amplification applications.

Product Features and Performance

Drain to Source Voltage (Vdss) of 150V

Maximum Gate-Source Voltage (Vgs) of ±20V

Extremely low On-Resistance (Rds(on)) of 750mΩ @ 1.4A, 10V

Continuous Drain Current (Id) of 1.4A at 25°C

Input Capacitance (Ciss) of 510pF @ 50V

Power Dissipation of 2W (Ta) and 3.2W (Tc)

Operating Temperature Range of -55°C to 150°C

Product Advantages

Compact SOT-23-6 Thin, TSOT-23-6 package

Excellent thermal and electrical performance

Suitable for high-frequency, high-efficiency power conversion applications

Supports a wide range of gate drive voltages

Key Technical Parameters

MOSFET Technology: Trench

FET Type: P-Channel

Threshold Voltage (Vgs(th)) of 4V @ 250μA

Gate Charge (Qg) of 19nC @ 10V

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for surface mount assembly

Compatibility

This device is compatible with a wide range of power electronic circuits and systems that require high-performance, energy-efficient P-channel MOSFETs.

Application Areas

Power supplies

Motor drives

Inverters

Converters

Switching regulators

General power switching applications

Product Lifecycle

This product is an active and current offering from Vishay/Siliconix. No discontinuation or end-of-life notices have been issued, and replacement or upgrade options are available.

Key Reasons to Choose This Product

Excellent electrical performance with low on-resistance and high voltage capability

Compact and thermally efficient surface mount package

Suitable for high-frequency, high-efficiency power conversion applications

Broad compatibility and wide range of gate drive voltages supported

Proven reliability and quality from a trusted manufacturer