Manufacturer Part Number
SI3441BDV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor MOSFET
Product Features and Performance
P-Channel MOSFET
Trench Technology
Low On-Resistance
Fast Switching Speed
Wide Operating Temperature Range (-55°C to 150°C)
Product Advantages
High Power Density
Improved Efficiency
Reliable Performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs Max): ±8V
Drain-Source On-Resistance (Rds(on)): 90mΩ @ 3.3A, 4.5V
Continuous Drain Current (Id): 2.45A
Power Dissipation (Pd): 860mW
Quality and Safety Features
RoHS3 Compliant
Tin-plated Leads for Reliable Soldering
Compatibility
Surface Mount Package (SOT-23-6)
Tape & Reel Packaging
Application Areas
Power Management Circuits
Motor Control
Switching Applications
Battery Charge/Discharge Circuits
Product Lifecycle
Currently in Production
No Immediate Discontinuation Planned
Replacement Parts Available
Key Reasons to Choose This Product
Excellent Power Handling Capability
Low On-Resistance for Improved Efficiency
Wide Operating Temperature Range
Reliable Performance in Demanding Applications
RoHS Compliance for Environmental Responsibility