Manufacturer Part Number
SI2315BDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
Drain to Source Voltage (Vdss): 12V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Current Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250A
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Product Advantages
Trench MOSFET technology
Surface Mount package
Key Technical Parameters
ROHS3 Compliant
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Tape & Reel (TR) package
Application Areas
Suitable for various power management and control applications
Product Lifecycle
No indication of discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
Trench MOSFET technology for improved performance
Surface mount package for compact design
Broad operating temperature range
RoHS3 compliance for environmental compatibility
Tape and reel packaging for automated assembly