Manufacturer Part Number
SI2314EDS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This product is a Discrete Semiconductor device, specifically a Transistor - FET, MOSFET - Single.
Product Features and Performance
Trench MOSFET technology
Low on-resistance
Fast switching speed
High power density
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power efficiency
Reliable and durable performance
Versatile application in power management and control circuits
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Maximum Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 33mΩ @ 5A, 4.5V
Continuous Drain Current (Id): 3.77A @ 25°C
Power Dissipation: 750mW
Quality and Safety Features
RoHS3 compliant
Robust surface mount package (SOT-23-3)
Compatibility
Compatible with various power management and control applications
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifiers
Industrial and consumer electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and durable operation
Wide temperature range and versatile applications
Cost-effective solution for power management and control