Manufacturer Part Number
SI2314EDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI2314EDS-T1-GE3 is a discrete semiconductor product, specifically a Transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
20V Drain to Source Voltage
33mOhm Maximum On-Resistance at 5A, 4.5V
77A Continuous Drain Current at 25°C
750mW Maximum Power Dissipation
-55°C to 150°C Operating Temperature Range
14nC Maximum Gate Charge at 4.5V
Product Advantages
Efficient power conversion
High reliability
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 33mOhm @ 5A, 4.5V
Threshold Voltage (Vgs(th)): 950mV @ 250A
Drive Voltage: 1.8V (Max Rds(on)), 4.5V (Min Rds(on))
Gate Charge (Qg): 14nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Designed for use in a variety of electronic circuits and systems
Application Areas
Power management
Switch-mode power supplies
Motor control
Lighting
Industrial electronics
Product Lifecycle
This product is currently in production and widely available.
Replacement or upgrade options may be available from Vishay or other manufacturers.
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
Wide operating temperature range for reliability
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmental responsibility
Compatibility with a wide range of electronic applications