SI2315BDS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2315BDS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This product is a P-Channel MOSFET transistor from the TrenchFET series.

Product Features and Performance

12V Drain to Source Voltage

±8V Gate to Source Voltage

50mΩ maximum On-State Resistance at 3.85A, 4.5V

715pF maximum Input Capacitance at 6V

750mW maximum Power Dissipation

-55°C to 150°C Operating Temperature Range

Product Advantages

Low On-State Resistance for efficient power switching

High input impedance for easy driving

Suitable for a wide range of operating temperatures

Key Technical Parameters

P-Channel MOSFET

Vdss: 12V

Vgs(Max): ±8V

Rds(on) (Max): 50mΩ @ 3.85A, 4.5V

Ciss (Max): 715pF @ 6V

Pd (Max): 750mW

Quality and Safety Features

RoHS3 Compliant

Reliable trench technology

Compatibility

SOT-23-3 (TO-236) Package

Surface Mount Mounting

Application Areas

Power management and control circuits

Switching applications

Audio/Video equipment

Consumer electronics

Product Lifecycle

This is an active product, not nearing discontinuation

Replacements and upgrades may be available from the manufacturer

Key Reasons to Choose This Product

Low On-State Resistance for efficient power switching

Wide operating temperature range

Small surface mount package for compact designs

Reliable trench MOSFET technology

RoHS3 compliance for environmental friendliness